Invited talks

Plenary talks

Jean-Michel Gérard (Laboratoire de Photonique Electronique et Ingénierie Quantiques CEA/UGA, Grenoble) :

    1985-2001 : the (slow) rise of self-assembled epitaxial quantum dots

 Gilles Patriarche (C2N Saclay)   :

   Structural and chemical study by TEM/STEM of III-V and II-VI semiconductor quantum dots

Odile Stéphan (LPS/Université Paris Saclay) : 

    Recent developments in STEM spectroscopy for probing electronic and optical properties of semiconducting materials and nanostructures

Mark Hopkinson (University of Sheffield) :

   Site-controlled MBE growth of quantum dots

 Morgan Trassin (ETH Zürich) :

    Engineering materials at the atomic scale for energy efficient application

 Session I : Growth mechanisms

"Oxides" : Monica Burriel (INMA Saragossa, Spain):

     Chemical Vapour Deposition of Epitaxial Complex Oxides: Fundamentals, Growth and Applications

 "Semiconductors" : Bruno Dlubak  (Laboratoire Albert Fert Palaiseau):

     Integration of 2D semiconductors for spintronics

  Session II : Structural and functional characterization

"Oxides" : Christophe Gatel (CEMES Toulouse):

     Electric field mapping at the nanoscale in dielectric and ferroelectric materials

 "Semiconductors" : Alexandre Arnoult (LAAS Toulouse):

     Some selected in situ characterization tools for MBE growth and their complementarity

Session III : Properties engineering using epitaxy

"Oxides" : Thomas Maroutian (C2N Saclay):

    Ferroelectric oxide membranes, from patterning to heterogeneous integration

"Semiconductors" : Moira Hocevar (Institut Néel Grenoble):

    Development of superconductor-semiconductor nanostructures for superconducting quantum devices

Session IV : Hybridization

"Oxides": Javier Villegas (Laboratoire Albert Fert Palaiseau):

    Optical modulation of electronic ground states in complex-oxide films and heterostructures

 "Semiconductors": Amaury Delamarre (C2N Saclay) :

     III-V epitaxy on patterned graphene for transferable membranes

Session V : From properties to devices

"Oxides" : Ausrine Bartasyte  (C2N/Femto ST):

    Advances and challenges in growth of LiNbO3-LiTaO3 thin films for acoustic and photonic devices

"Semiconductors" : Amélie Dussaigne (LETI Grenoble):

  The InGaN alloy for Red emitting micro-LEDs